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Construction Materials for Compatible Processing of Laser Diodes and High Electron Mobility Transistors

IP.com Disclosure Number: IPCOM000121523D
Original Publication Date: 1991-Sep-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 2 page(s) / 57K

Publishing Venue

IBM

Related People

Lary, JE: AUTHOR

Abstract

Materials and generalized processing are described to allow compatible construction of laser diodes (LDs) and high electron mobility transistors (HEMTs) on the same substrate.

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Construction Materials for Compatible Processing of Laser Diodes
and High Electron Mobility Transistors

      Materials and generalized processing are described to
allow compatible construction of laser diodes (LDs) and high electron
mobility transistors (HEMTs) on the same substrate.

      Referring to the figure, semi-insulating gallium arsenide
(GaAs) substrate 2 is etched to expose a {111}A crystal face in a
selected area 4.  Next, undoped aluminum gallium arsenide
(Al0.5Ga0.5As) layer 6 is epitaxially deposited.  Layer thicknesses
are not drawn to scale; therefore, approximate thickness of layers is
indicated. Epitaxial growth is continued to form undoped layer 8 of
AlxGa1-xAs (where x = 0.3 to 0.5), undoped GaAs layer 10, and undoped
Al0.3Ga0.7As layer 12.  Under appropriate molecular beam epitaxy
(MBE) conditions with silicon (Si) as a dopant, N-type material is
formed by layers 18 and 20 on {100} regions 14 and 16, and P-type
material on region 4. Layer 18 is comprised of the same material used
in layer 12 except for the added Si dopant in layer 18.  Layer 20 is
comprised of the same material used in layer 10 except for the Si
dopant in layer 20.

      Layers 18 and 20 in regions 14 and 16 may be used to form
N- channel HEMTs, and in region 4, to form P-channel HEMTs.
Thickness and doping levels of layers 18 and 20 can be designed to
cause both N and P channel devices to be operable in depletion mode.

      By using only undoped layers 6, 8, 1...