Browse Prior Art Database

Double Shielded Bipolar Collector Structure

IP.com Disclosure Number: IPCOM000121832D
Original Publication Date: 1991-Sep-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 25K

Publishing Venue

IBM

Related People

Tang, DD: AUTHOR

Abstract

Described is a double-shielded bipolar collector structure designed to eliminate entirely charges from the substrate.

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Double Shielded Bipolar Collector Structure

      Described is a double-shielded bipolar collector structure
designed to eliminate entirely charges from the substrate.

      The double-shielded bipolar collector structure, as shown in
the figure, uses n++ material to grow a thick layer p- epi on the
substrate. Also, an npn transistor is positioned on top of the p-
epi.

      Electrons and holes generated in the n++ substrate are shielded
entirely by the p- epi on the n++ substrate.  Only very small amounts
of e-h generated in the p- gets into the n++ subcollector.

      Disclosed anonymously.