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Use of Solid Materials in Etching Processes to Eliminate Hazardous Gases

IP.com Disclosure Number: IPCOM000121839D
Original Publication Date: 1991-Sep-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 1 page(s) / 64K

Publishing Venue

IBM

Related People

Oehrlein, GS: AUTHOR [+2]

Abstract

Disclosed is a means of providing the desired etchant in reactive ion etching processes by the use of suitable solid materials within the etch reactor. This eliminates the need for hazardous compressed gases in the work place.

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This is the abbreviated version, containing approximately 55% of the total text.

Use of Solid Materials in Etching Processes to Eliminate Hazardous
Gases

      Disclosed is a means of providing the desired etchant in
reactive ion etching processes by the use of suitable solid materials
within the etch reactor.  This eliminates the need for hazardous
compressed gases in the work place.

      Many of the gases used in reactive ion etching of electronic
materials are hazardous, e.g., C12, CC14, etc. The use of these gases
in laboratory and manufacturing environments requires extensive
safety precautions and sophisticated gas cabinets and delivery
systems to assure the safety of humans in the work area.

      Most of the elements or radicals required for etching may be
readily obtained from solid materials by the ion bombardment
associated with reactive ion etching.  For instance, a solid Teflon
electrode in contact with an oxygen or hydrogen plasma has been used
to etch Si and SiO2 without introducing CF4 or other fluorocarbons.
Oxygen and hydrogen radicals react with the solid Teflon electrode
and introduce CF-groups into the gas phase.  These are then used to
etch the electronic materials.

      It is proposed to eliminate the need for toxic gases by
incorporating the required substances into a solid.  For example,
CC14, a carcinogen, can be polymerized, and a solid film containing
CC1 groups may be produced.  This film is inert and may be
transported to and installed in the etching chamber.  The film, once
contacted by an oxygen...