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Embedded Semiconductor Laser with Anti-reflection Coatings

IP.com Disclosure Number: IPCOM000121895D
Original Publication Date: 1991-Oct-01
Included in the Prior Art Database: 2005-Apr-03
Document File: 2 page(s) / 65K

Publishing Venue

IBM

Related People

Subbanna, S: AUTHOR

Abstract

This is a process for fabricating a semiconductor laser embedded in a wide-gap semiconductor (or silicon), with integral anti-reflection coatings, for use in optoelectronic integrated circuits.

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This is the abbreviated version, containing approximately 65% of the total text.

Embedded Semiconductor Laser with Anti-reflection Coatings

      This is a process for fabricating a semiconductor laser
embedded in a wide-gap semiconductor (or silicon), with integral
anti-reflection coatings, for use in optoelectronic integrated
circuits.

      Embedded lasers are useful in integrated optoelectronics, where
waveguides, lasers, electronic components and detectors are
integrated on the same chip. They can also be useful in GaAs on Si
technology.

      The starting substrate can be any III-V material, such as GaAs,
or silicon.  2-3 mm of wide-gap (Al, Ga) As is then grown, followed
by a silicon dioxide mask layer (Fig. A). The wide-gap material will
be transparent to the laser light and can serve a wave-guiding
function.  The area where the laser will be is then lithographically
defined, and the oxide and (Al, Ga) As are then etched down to the
substrate. Reactive ion etching is used to provide vertical sidewalls
(Fig. B).

      Next, several alternate silicon dioxide/silicon nitride films
of the appropriate thicknesses to provide anti-reflection coatings
are deposited (Fig. C), and then etched using RIE, leaving
multi-layer oxide/nitride sidewalls (Fig. D).  A blockout mask and
wet etching can be used in order to etch the coatings on one side to
allow for light emission from only one side of the embedded laser.

      The heterojunction laser structure is then grown using
selective epitaxy, such as metal-organic chemical vapor dep...