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Novel Material for Etch Stop or Barrier Layer in a Multilayer Electronic Packaging Structure

IP.com Disclosure Number: IPCOM000121962D
Original Publication Date: 1991-Oct-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Related People

Babich, ED: AUTHOR [+4]

Abstract

Disclosed is a novel material to be used as a barrier or etch-stop layer in the fabrication of multilayer microelectronic packaging structures. The material consists of polymers containing Si and Sn in appropriate ratios, which can be prepared by: Mixing organosiloxy derivatives of tin in the precursors of the base polymers, such as partly polymerized polysiloxane resins, or Plasma polymerization to deposit the barrier layer using a mixture feed gas of tetramethylsilane and tetramethyltin in appropriate proportions. Incorporation of tin is to impart polysiloxane films with the following properties (or advantages as etching barriers): 1. Sn has an ionic radii greater than Si. The (Si, Sn) mixed oxide layer formed during plasma etching will have less stress than the oxide layer formed from neat polysiloxanes [1]. 2.

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Novel Material for Etch Stop or Barrier Layer in a Multilayer Electronic
Packaging Structure

      Disclosed is a novel material to be used as a barrier or
etch-stop layer in the fabrication of multilayer microelectronic
packaging structures.  The material consists of polymers containing
Si and Sn in appropriate ratios, which can be prepared by:
   Mixing organosiloxy derivatives of tin in the precursors of the
base polymers, such as partly polymerized polysiloxane resins, or
   Plasma polymerization to deposit the barrier layer using a mixture
feed gas of tetramethylsilane and tetramethyltin in appropriate
proportions.
Incorporation of tin is to impart polysiloxane films with the
following properties (or advantages as etching barriers):
1.   Sn has an ionic radii greater than Si.  The (Si, Sn) mixed oxide
layer formed during plasma etching will have less stress than the
oxide layer formed from neat polysiloxanes [1].
2.   The mixed oxide layer will be more "wettable" because of oxygen
deficiency of tin oxide.
Addition of tin reduces the selectivity of the barrier somewhat [2],
but a selectivity of ten can be readily achieved using 6% Si and 8%
Sn.  The appropriate combined metal content varies from 12 to 25
at.%.

      The proposed etch barrier material can be removed in FREON*
containing oxygen plasma with substrate temperature biased at 100~C.
*  Trademark of E. I. du Pont de Nemours & Co.

      References
(1)  N. J. Chou, C. H. Tang, J. Parasz...