Browse Prior Art Database

Simple Waveguided Injection Laser Structure

IP.com Disclosure Number: IPCOM000121972D
Original Publication Date: 1991-Oct-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 2 page(s) / 46K

Publishing Venue

IBM

Related People

Hodgson, RT: AUTHOR [+2]

Abstract

Disclosed is a planar, fast, waveguided multilaser structure. The discovery that GaAs can be made p++ with very heavy carbon doping and with a large valence band offset, and that GaInAs with the same carbon doping is n type if the In is 10% of the Ga + In concentration, can be used to make a fast, simple construction, waveguide injection laser.

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Simple Waveguided Injection Laser Structure

      Disclosed is a planar, fast, waveguided multilaser
structure.  The discovery that GaAs can be made p++ with very heavy
carbon doping and with a large valence band offset, and that GaInAs
with the same carbon doping is n type if the In is 10% of the
Ga + In concentration, can be used to make a fast, simple
construction, waveguide injection laser.

      The construction steps are shown in the figures.

      An intrinsic GaAs layer 2 is grown on a GaAs substrate 1.  Then
a p++ (heavily doped with carbon) GaAs layer 3, an n+ GaAs layer 4
and an intrinsic layer 5 are grown on layer 2.  Fig. 1 shows the
structure after a photoresist layer 6 has been spun on, exposed and
developed.

      Fig. 2 shows the structure after etching of the top intrinsic
layer 5 using a reactive ion etching (RIE) and after implantation of
indium through the layer 4 into the carbon doped layer 3 to give a
greater than 10% indium concentration in region 7.  Region 7 will
become n type after suitable annealing.  Fig. 3 shows the structure
after contact metallugry 8 is laid down using standard
photolithographic procedures, and Fig. 4 shows the finished structure
after using the metal layer 8 as a mask for mesa etching down to the
p++ layer 3 and addition of contact metallurgy 9 to contact the p++
layer.