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Thermally Stable Silicon Containing RIE Barrier

IP.com Disclosure Number: IPCOM000122089D
Original Publication Date: 1991-Oct-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Related People

Babich, ED: AUTHOR [+4]

Abstract

A new composition which can be used in thin film module fabrication as an oxygen RIE barrier is based upon an organosilicon glass resin, terminated with hydroxyl groups and a polyamic acid. It was found that Du Pont polyamic acid 5878 is compatible with phenyl containing organosilicon glass resin GR 908 (Owens-Illinois). When mixed in 1:1 ratio, this blend forms a film with silicon content of about 12%.

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Thermally Stable Silicon Containing RIE Barrier

      A new composition which can be used in thin film module
fabrication as an oxygen RIE barrier is based upon an organosilicon
glass resin, terminated with hydroxyl groups and a polyamic acid.  It
was found that Du Pont polyamic acid 5878 is compatible with phenyl
containing organosilicon glass resin GR 908 (Owens-Illinois).  When
mixed in 1:1 ratio, this blend forms a film with silicon content of
about 12%.  Upon heating, a condensation reaction between carboxy-
and aminogroups of PI and hydroxy-functionalities of glass resin
occurs which leads to the formation of silicon containing crosslinked
polyimide films with the structure shown below:
This approach has some advantages over polyimide-siloxane
block-copolymers such as:
      - The silicon content can be adjusted
      - The glass resin can be mixed with any polyimide
      - No reaction with copper has been observed
      - Thermal stability is higher.

      Disclosed anonymously.