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P-N Junction Between Two-Dimensional Electrons and Holes

IP.com Disclosure Number: IPCOM000122223D
Original Publication Date: 1991-Nov-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Esaki, L: AUTHOR [+2]

Abstract

Described is a fabrication method to form a p-n junction between two- dimensional electrons and holes utilizing single epitaxial growth. A GaAs/AlGaAs system is used as an example to illustrate the basic principles; however, the process can be applied to similar systems as well.

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P-N Junction Between Two-Dimensional Electrons and Holes

      Described is a fabrication method to form a p-n junction
between two- dimensional electrons and holes utilizing single
epitaxial growth. A GaAs/AlGaAs system is used as an example to
illustrate the basic principles; however, the process can be applied
to similar systems as well.

      It has been shown that in the MBE growth of GaAs and
Ga1-xAlxAs, the Si dopant atoms exhibit amphoteric behavior. If the
substrate orientation is at or near (100) or (111)B, i.e., the
As-terminating surface, the Si atoms will be incorporated primarily
into Ga and Al sites and act as donors resulting in n-type epitaxial
films.  On the other hand, if the substrate orientation is at or near
(111)A, the Ga-terminating surface, the Si atoms will be incorporated
into As sites. This results in p-type epitaxial films.

      The concept described herein utilizes lithography with an
anisotropic etchant to produce, for example, both (100)- and (111)A-
oriented surfaces on the same substrate.  These two surfaces can meet
and form an angle of 125.3~, as shown in Fig. 1.  After deposition of
a modulation-doped structure, two-dimensional electron and hole gases
will form at the heterostructures, as shown in Fig. 2.  The region
where the two-dimensional electron sheet and the two-dimensional hole
sheet meet is the one-dimensional p-n junction.  The results in a
structure that can be applicable in fabricating one-dimensional
quan...