Browse Prior Art Database

Laser Light Transmission Mask: A Defect Free Trench Process

IP.com Disclosure Number: IPCOM000122475D
Original Publication Date: 1991-Dec-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 2 page(s) / 56K

Publishing Venue

IBM

Related People

Dauerer, WP: AUTHOR [+4]

Abstract

The following describes a process to make a laser light transmission mask through a trench process. See the process sequence diagram. 1. DETAIL "A": Starting with a 6" square substrate of quartz approximately 0.120" thick, and coated on the outside with chrome approximately 800 Ao thick (Detail A-1). The chrome layer is used for the alignment scheme. 2. DETAIL "B": Top surface is coated with a photoresist approximately 30 KAo thick. 3. DETAIL "C": The photoresist is patterned with functional details, in this case circles and alignment marks (C-1 and C-2, as shown). 4. DETAIL "D": The image is now transferred via reactive ion etching or ion beam milling into the quartz material approximately 15 KAo-20 KAo deep. See D-1. The alignment marks of Cr/quartz are also etched. See D-2. 5.

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Laser Light Transmission Mask: A Defect Free Trench Process

      The following describes a process to make a laser light
transmission mask through a trench process.  See the process sequence
diagram.
1.   DETAIL "A":    Starting with a 6" square substrate of quartz
approximately 0.120" thick, and coated on the outside with chrome
approximately 800 Ao thick (Detail A-1).  The chrome layer is used
for the alignment scheme.
2.   DETAIL "B":    Top surface is coated with a photoresist
approximately 30 KAo thick.
3.   DETAIL "C":    The photoresist is patterned with functional
details, in this case circles and alignment marks (C-1 and C-2, as
shown).
4.   DETAIL "D":    The image is now transferred via reactive ion
etching or ion beam milling into the quartz material approximately 15
KAo-20 KAo deep.  See D-1.  The alignment marks of Cr/quartz are also
etched.  See D-2.
5.   DETAIL "E":    The photoresist is now removed and the plate is
ready to be coated with dielectric material of approximately 13 KAo
in the central 3" square area.  See F-2.
6.   DETAIL "F":    A block-out mask F-1 covers the outside Cr area,
since the deposited dielectric material is only required in the
center, essentially replacing the etched-out quartz in Detail "D" and
"E".
7.   DETAIL "G":    The final operation is to remove the dielectric
material from the top of each 75 m stud located in the functional 3"
square area.  This is accomplished with a localized...