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Planarization and Thin Film Process for Substrates

IP.com Disclosure Number: IPCOM000122677D
Original Publication Date: 1991-Dec-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Bennett, M: AUTHOR [+4]

Abstract

A procedure for producing a substrate surface suitable for direct patterning with thin films is described. Thin film patterning can be accommodated on such a surface with flatness control of less than or equal to 35 mm and surface roughness of less than or equal to 2500 Angstroms CLA.

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Planarization and Thin Film Process for Substrates

      A procedure for producing a substrate surface suitable
for direct patterning with thin films is described.  Thin film
patterning can be accommodated on such a surface with flatness
control of less than or equal to 35 mm and surface roughness of less
than or equal to 2500 Angstroms CLA.

      The substrate, as received, is top surface ground using either
a vertical or horizontal spindle grinder.  Substrate is secured in
the grinding tool such as to provide a plane parallel to the grinding
wheel.  The substrate is then passed repetitively under the wheel
removing material from the plane of the substrate in increments until
the flatness limit is reached.  Sacrificial substrate pieces can be
placed on either side of the substrate being ground to provide
further flatness control and reduction in overall flatness.

      Once the substrate has been ground to the desired flatness and
surface finish, it is ready for thin film patterning.  With this
procedure no further surface preparation is required prior to thin
film metal processing. All thin film processes, such as
evaporation/sputtering, spin apply, photo expose and develop,
subetch, and lift-off can be accommodated.