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Browse Prior Art Database

Soft Error Immune Embedded Array Cell

IP.com Disclosure Number: IPCOM000122736D
Original Publication Date: 1991-Dec-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 1 page(s) / 40K

Publishing Venue

IBM

Related People

Wang, WY: AUTHOR

Abstract

Conventional bipolar embedded array cell for logic masterslices and directory array application is designed in non-saturated region. Thus, the high power cell is required to achieve high performance and reduce system soft error. A bipolar embedded array cell for soft error immune is shown in the Figure. The cell differential voltage is in saturation region during standby mode and read mode. At the beginning of the write operation, the standby current level is reduced by switching off part of the standby current in current source. The current switching is accomplished by raising WE voltage level above VRW temporarily. After cell has been written, the standby current is increased as the word line voltage is turned off. The cell node voltage level is this recovered to its standby level very quickly.

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Soft Error Immune Embedded Array Cell

      Conventional bipolar embedded array cell for logic masterslices
and directory array application is designed in non-saturated region.
Thus, the high power cell is required to achieve high performance and
reduce system soft error.  A bipolar embedded array cell for soft
error immune is shown in the Figure.  The cell differential voltage
is in saturation region during standby mode and read mode.  At the
beginning of the write operation, the standby current level is
reduced by switching off part of the standby current in current
source.  The current switching is accomplished by raising WE voltage
level above VRW temporarily.  After cell has been written, the
standby current is increased as the word line voltage is turned off.
The cell node voltage level is this recovered to its standby level
very quickly. Thus, the cell can be designed with low power, high
performance, and soft error immunity.  For discrete array
application, the switching current source can be designed outside the
main array area to achieve high density.

      Disclosed anonymously.