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Magnetoresistive Sensor with (111) Crystallographic Texture

IP.com Disclosure Number: IPCOM000122756D
Original Publication Date: 1991-Dec-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 1 page(s) / 49K

Publishing Venue

IBM

Related People

Brown, R: AUTHOR [+4]

Abstract

Magnetoresistive materials can change their intrinsic resistance by the application of an external magnetic field. The magnetoresistance effect is generally quite small, as in the case of NiFe where the change in resistance (delta-R) from an applied field that saturates NiFe (about 30 oersteds) to zero field is only about 2% of the intrinsic resistance (R). However, the magnetoresistive effect in NiFe is large enough to be used as a magnetic sensor, since minute changes in resistance can be monitored. Since the change in the relative magnetoresistance (delta-R/R) of NiFe is only a few percent, any changes in the intrinsic delta-R of NiFe will greatly impact the sensitivity of the sensor in detecting changes in the applied magnetic field.

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Magnetoresistive Sensor with (111) Crystallographic Texture

      Magnetoresistive materials can change their intrinsic
resistance by the application of an external magnetic field. The
magnetoresistance effect is generally quite small, as in the case of
NiFe where the change in resistance (delta-R) from an applied field
that saturates NiFe (about 30 oersteds) to zero field is only about
2% of the intrinsic resistance (R).  However, the magnetoresistive
effect in NiFe is large enough to be used as a magnetic sensor, since
minute changes in resistance can be monitored.  Since the change in
the relative magnetoresistance (delta-R/R) of NiFe is only a few
percent, any changes in the intrinsic delta-R of NiFe will greatly
impact the sensitivity of the sensor in detecting changes in the
applied magnetic field.  Therefore, it is imperative to both maximize
and control the intrinsic delta-R of NiFe in any viable manufacturing
process.

      Most magnetic properties are anisotropic with respect to a
material's structure or crystallographic texture, NiFe is no
exception.   A way to increase the delta-R/R of a material is to
manufacture it with a fix crystallographic orientation or texture
that enhances the effect.  The magnetoresistive effect in NiFe can be
maximized by producing a highly oriented (111) NiFe film.  Increases
of delta-R/R of 10-15% are possible.

      A (111) texture can be produced by depositing the NiFe onto a
thin nucleation layer that will epi...