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Resist Width Control by Temperature Feedback

IP.com Disclosure Number: IPCOM000123066D
Original Publication Date: 1998-May-01
Included in the Prior Art Database: 2005-Apr-04
Document File: 2 page(s) / 96K

Publishing Venue

IBM

Related People

Tsujimura, T: AUTHOR [+2]

Abstract

Disclosed is a method to make uniform width of photo resist. Photo resist is usually used for the patterning of thin films. Depend on the prebake oven temperature distribution, the exposure distribution or the development-solvent-concentration distribution, non-uniform line width of photo resist is created. Using the chemically-amplified photo resist and temperature feedback of baking plate, uniform line width of photo resist can be obtained.

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Resist Width Control by Temperature Feedback

   Disclosed is a method to make uniform width of photo
resist.  Photo resist is usually used for the patterning of thin
films.  Depend on the prebake oven temperature distribution, the
exposure distribution or the development-solvent-concentration
distribution, non-uniform line width of photo resist is created.
Using the chemically-amplified photo resist and temperature feedback
of baking plate, uniform line width of photo resist can be obtained.

   Fig.1 shows the conventional patterning method of photo
resist.  After aluminum is deposited on a glass substrate (1),
positive-type photo resist is coated.  (2) Then substrate is exposed
to UV (ultraviolet) light.  Where the mask is transparent, the UV
light goes through the mask and network of photo resist polymer is
dissolved.  (3) The substrate is developed using 2.38% TMAH
(Tetramethylammonium Hydroxide) and the area that is not exposed by
UV light remains and the resist pattern is created.  (4) After making
pattern of photo resist, the substrate is dipped in the mixture of
phosphoric acid, nitric acid, acetic acid and water, and the aluminum
is patterned.  (5) Stripping the photo resist by resist stripper, the
aluminum pattern remains. (6)

   Fig.2 shows the new patterning method.  After aluminum is
deposited on a first glass substrate (1), negative-type
chemically-amplified photo resist is coated.  (2) Then substrate is
exposed in UV light.  Where the mask is t...