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A Method of Increasing Storage Capacitance with Dual Capacitors

IP.com Disclosure Number: IPCOM000123575D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2005-Apr-05
Document File: 2 page(s) / 62K

Publishing Venue

IBM

Related People

Arai, T: AUTHOR

Abstract

Disclosed is a method to increase the storage capacitance of active matrix liquid crystal displays (AMLCDs), by forming several capacitors in layers. This method makes it possible to increase the storage capacitance without decreasing the aperture ratio of the AMLCDs.

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A Method of Increasing Storage Capacitance with Dual Capacitors

   Disclosed is a method to increase the storage capacitance
of active matrix liquid crystal displays (AMLCDs), by forming
several capacitors in layers.  This method makes it possible to
increase the storage capacitance without decreasing the aperture
ratio of the AMLCDs.

   In case of a bottom-gate-thin-film-transistors
(bottom-gate-TFTs), a storage capacitance is often formed on a gate
line (Figure 1).  To keep the pixel bias while the channel of TFT is
closing, large storage capacitance is required.  Wide gate line
allows to increase the area of the capacitor and increase its
capacitance, but de creases an aperture ratio.

   Forming storage capacitor in layers allows to increase the
capacitance without decreasing an aperture ratio.  Figure 2 shows
the example of dual storage capacitors per pixel.  Two storage
capacitors are formed on and under the gate line.  This structure
presents high storage capacitance without decreasing an aperture
ratio.