Browse Prior Art Database

Reusable Liner for Contamination Reduction on Reactive Ion Etching and Ion Beam Etching Reactors

IP.com Disclosure Number: IPCOM000123647D
Original Publication Date: 1999-Feb-01
Included in the Prior Art Database: 2005-Apr-05
Document File: 2 page(s) / 78K

Publishing Venue

IBM

Related People

Nguyen, SV: AUTHOR [+5]

Abstract

Advanced process technology such as plasma Reactive Ion Etching (RIE) or Ion Beam Etching has been used to etch hard materials such as Al2O3/TiC (N58) for slider head fabrication. One of the biggest problems during the etching of the N58 is the redeposition of non-volatile by-productS in the reactor, thus, requiring substantial cleaning of the etch system sidewall after one or multiple etch processes. Otherwise, increase of redeposition particles will cause significant problems in device yields due to particle contamination. In addition, recent advanced integrated circuit device fabrication of high density DRAM capacitor storage devices, inert gases (Ar, He, etc.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 52% of the total text.

Reusable Liner for Contamination Reduction on Reactive Ion Etching
and Ion Beam Etching Reactors

   Advanced process technology such as plasma Reactive Ion
Etching (RIE) or Ion Beam Etching has been used to etch hard
materials such as Al2O3/TiC (N58) for slider head fabrication.  One
of the biggest problems during the etching of the N58 is the
redeposition of non-volatile by-productS in the reactor, thus,
requiring substantial cleaning of the etch system sidewall after one
or multiple etch processes.  Otherwise, increase of redeposition
particles will cause significant problems in device yields due to
particle contamination.  In addition, recent advanced integrated
circuit device fabrication of high density DRAM capacitor storage
devices, inert gases (Ar, He, etc.) and reactive Fluorine-based and
Chlorine-based gases have also been used in plasma RIE and Ion Bean
Etch processes to remove non-volatile ferroelectric (BaSrTiO3, etc.)
and metallic films (Pt, Au, etc.) (1) (2).  The redeposition of
non-volatile by-product during the etching (patterning) of these
films also causes a substantial cleaning requirement in the equipment
to reduce/eliminate particle contamination.  For batch RIE systems,
this cleaning may take hours and is incompatible with cleanroom
environment.  It is clearly advantageous to minimize the cleaning
time of equipment and increase the overall equipment throughput.

   In order to reduce the cleaning time, a recyclable (or
disposable) liner is use...