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Deposition of High Quality Silicon Oxide Films on Indium Tin Oxide Film

IP.com Disclosure Number: IPCOM000123749D
Original Publication Date: 1999-Apr-01
Included in the Prior Art Database: 2005-Apr-05
Document File: 2 page(s) / 139K

Publishing Venue

IBM

Related People

Hiromasu, Y: AUTHOR [+3]

Abstract

This article describes a plasma enhanced chemical vapor deposition (PE-CVD) technique for forming a silicon oxide or silicon nitride film on indium tin oxide (ITO) without the protrusion formation on the surface of the ITO.

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Deposition of High Quality Silicon Oxide Films on Indium Tin Oxide
Film

   This article describes a plasma enhanced chemical vapor
deposition (PE-CVD) technique for forming a silicon oxide or silicon
nitride film on indium tin oxide (ITO) without the protrusion
formation on the surface of the ITO.

   The process includes the following steps.
  1.  Forming a silicon oxy-nitride approximately 50nm thick
      layer using a gaseous mixture of SiH4, N2O.  The protrusion
      of the ITO are not formed during this step, because the
      surface of the ITO is not exposed to N2 plasma.
  2.  Forming a silicon oxide or silicon nitride layer by
      conventional PE-CVD technique.

   Fig.1 shows the scanning electron microscopy (SEM) image
of the silicon oxide film on the ITO using the proposed technique.
Fig.2 shows the SEM image of the silicon oxide film using
conventional technique.