Browse Prior Art Database

High Temperature Lift-Off Process Method

IP.com Disclosure Number: IPCOM000124027D
Original Publication Date: 1991-Feb-01
Included in the Prior Art Database: 2005-Apr-06
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Related People

Pousland, C: AUTHOR

Abstract

A standard photoresist is first treated conventionally to create images of suitable shape for lift-off, i.e., having recursive or overhanging tops at image edges. By silylating the top surface of the developed photoresist, the resist and overlying metal may be readily lifted off by standard methods after high temperature treatments, e.g., deposition of chrome, copper, and gold.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

High Temperature Lift-Off Process Method

      A standard photoresist is first treated conventionally to
create images of suitable shape for lift-off, i.e., having recursive
or overhanging tops at image edges.  By silylating the top surface of
the developed photoresist, the resist and overlying metal may be
readily lifted off by standard methods after high temperature
treatments, e.g., deposition of chrome, copper, and gold.

      Referring to Fig. 1, a photoresist image is formed by
conventional processing of a standard photoresist 10 on substrate 12.

      As shown in Fig. 2, a silylation treatment of the image
material of Fig. 1 with any of several silylating compounds, e.g., a
hexamethyl-cyclotrisilazane (HMCTS)-based liquid mixture, results in
creating a hardened top surface 14 on a base of unreacted photoresist
10.  High temperature metal 16 is then vacuum deposited as shown.
Lift-off of metal 16 and resist 10 and 14 is performed by a
conventional method, e.g., tape, mechanical spray, etc.

      Disclosed anonymously.