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Method for a silicon nanowire waveguide for Raman amplification

IP.com Disclosure Number: IPCOM000124273D
Publication Date: 2005-Apr-14
Document File: 3 page(s) / 70K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for a silicon nanowire waveguide for Raman amplification. Benefits include improved functionality and improved performance.

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Method for a silicon nanowire waveguide for Raman amplification

Disclosed is a method for a silicon nanowire waveguide for Raman amplification. Benefits include improved functionality and improved performance.

Background

              Conventionally, Raman amplification research with silicon uses silicon on insulator (SOI) ridge waveguides or channel waveguides where the optical mode is almost entirely contained within the silicon material. This approach maximizes the peak intensity of the optical field within the waveguide. Additionally, the overlap of the pump and probe optical modes are maximized to accentuate the nonlinear coupling between these two modes.

General description

              The disclosed method is silicon nanowire waveguide for Raman amplification. The key elements of the disclosed method include:

•             Silicon nanowire core

•             Texturing of the nanowire to spread the gain spectrum

•             Bulk manufacturing (extrusion) process for a Silicon-core waveguide

Advantages

              The disclosed method provides advantages, including:

•             Improved functionality due to providing a silicon nanowire waveguide for Raman amplification

•             Improved performance due to increasing the peak optical field intensity within the Si core

•             Improved performance due to virtually eliminating the coupling loss because the waveguide mode can be engineered to be well-matched to that of a conventional lens or optical fiber

•             Improved performance due to enabling improved pump efficiency because the divergence (numerical aperture) of the mode is lower

Detailed description

              The disclosed method is a very slender wire embedded into the center of a glass (silicon dioxide) filament. The filament may be silicon wire or a combination of optically-transparent materials, such as silicon dioxide and silicon oxynitride (see Figure 1). Alternatively, the silicon dioxide may be supported on a silicon wafer to form a planar waveguide (see Figure 2).

              The dimensions of the filament and the silicon nanowire core are crucial to achieving the required performance of the device. The goal is to achieve dimensions where the filament supports a single well-defined optical mode in the near-infrared band (1.2-µm to 1.6-µm wavelength). In...