Non-Volatile Magnetic Solid State Memory
Original Publication Date: 2002-Feb-11
Included in the Prior Art Database: 2005-Jun-09
National Institute of Standards and Technology
William Egelhoff: INVENTOR [+3]
This invention concerns an implementation of a magnetic random access memory device which uses (1) the principle of pulsed-current induced magnetic domain reconfiguration for data storage, and (2) a nanocontact magnetoresistive effect to "read" the encoded data. A schematic design of the single "domain-configuration magnetic random access memory" (DCMRAM) is shown in figure 1. A key part is the rectangular ferromagnetic island made of Ni80Fe20, which is referred as the memory element (ME). The ends are connected to electrical contact pads made of gold or some other high conductivity non magnetic metal. The other key component is a half-metallic island, such as chromium dioxide (Cr02), which makes a very small contact at the specific location of the memory element This is referred to as the reading element (RE). The other end of the RE is in contact with another electrical contact pad.