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Browse Prior Art Database

Single gate Push Pull vertical transitor

IP.com Disclosure Number: IPCOM000126506D
Original Publication Date: 2005-Jul-22
Included in the Prior Art Database: 2005-Jul-22
Document File: 7 page(s) / 113K

Publishing Venue

IBM

Abstract

What follows is a vertical transistor single gate Push Pull device. The device has a vertical gate in silicon with a P device on one side and a N device on the other with a buried connection between the two devices.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 60% of the total text.

Page 1 of 7

Single gate Push Pull vertical transitor

Useing a vertical gates for the building block of a SRAM cell allowes for longer L, less off current, and more scalability. The area for the whole Push Pull is envisioned to be much less than that of its planar, or dual gate vertical counter parts.

Below are cross sections of the assembly of the device.

Vertical Transistor Applications Shared Gate
Push Pull Pair

Mlamorey@us.ibm.com

Contributors:

Mark Lamorey John Higgins

Larry Nesbit

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1

Trench Formation ( stack mask )

Process A

X-Section

4

Mlamorey@us.ibm.com

1

[This page contains 1 picture or other non-text object]

Page 2 of 7

Poly Deposition

Process B

X-Section

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Implant Holder Poly Deposition

N/A

5

Mlamorey@us.ibm.com

Poly implants

Process B

X-Section

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Implant Holder Poly Deposition

N+P Implant Poly N Implant Poly P Implant Poly

θθ

N/A

6

Mlamorey@us.ibm.com

2

[This page contains 1 picture or other non-text object]

Page 3 of 7

Poly Strip Recess

Process B

X-Section

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Implant Holder Poly Deposition

N+P Implant Poly N Implant Poly P Implant Poly

N/A

7

Mlamorey@us.ibm.com

Implant Diffusion

Process B

X-Section

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N Implant diffusion P Implant Diffusion Implant Holder Poly Deposition

N/A

8

Mlamorey@us.ibm.com

3

Page 4 of 7

Source Drain Conductor (1)

Process B

X-Section

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Metal oxide (tungten nitride) Gate Oxide

N Implant diffusion P Implant Diff...