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Low temperature sintered paste for Si-carrier deep blind via fill applications

IP.com Disclosure Number: IPCOM000126979D
Original Publication Date: 2005-Aug-16
Included in the Prior Art Database: 2005-Aug-16
Document File: 1 page(s) / 73K

Publishing Venue

IBM

Abstract

Disclosed is a novel method to fill deep blind vias using low temperature sintered conducting paste.

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This is the abbreviated version, containing approximately 66% of the total text.

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Low temperature sintered paste for Si-carrier deep blind via fill applications

YOR820040614

It has been shown that when metal particle size gets small (<10nm), metal melting point is significantly reduced [1]. Small particle size metals are commercially available. Full density sintering of nanoparticle size copper is reported at 500C resulting in electrical resistivity of 2-2.5 µΩcm. Knitting mixed composite, low CTE- type paste particles together using copper sintering could then be achieved at much lower temperatures, even at 400C or below if the copper particle size is in nm-scale. Argonide (www.argonide.com) supplies organic film coated nanoparticles of copper thus protecting the copper against agglomeration - an important aspect in making low temperature sinter a possibility. The paste is made with these organic material coated copper nanoparticles and an inorganic, low CTE material or metallic, low CTE material such as W or Mo using an organic base where gas retention in the filled via would be reduced.

An alternative to the squeeze-type paste via fill approach is an inkjet approach, which has been used for patterning polyimide films with conducting lines [2]. An inkjet head could be built to match the deep via patter in the substrate. The size of the inkjet head could be chip size up to the whole wafer size. Thus the deep via fill could be done chip site or whole wafer at a time. With nanosize conductive or insulating particle a solution or suspension co...