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Selective Deposition of Tantalum Oxynitride Films for Advanced Mask Manufacturing

IP.com Disclosure Number: IPCOM000127546D
Publication Date: 2005-Aug-31
Document File: 2 page(s) / 152K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that selectively deposits tantalum oxynitride (TaOXNY) films. This decreases the number of process steps in mask manufacturing by eliminating the etch step. Benefits include a solution that simplifies the manufacturing process and increases CD linearity in the patterning step.

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Selective Deposition of Tantalum Oxynitride Films for Advanced Mask Manufacturing

Disclosed is a method that selectively deposits tantalum oxynitride (TaOXNY) films. This decreases the number of process steps in mask manufacturing by eliminating the etch step. Benefits include a solution that simplifies the manufacturing process and increases CD linearity in the patterning step.

Background

Currently, there is a need to decrease the complexity of the EUV mask blank manufacturing process. The current process deposits an anti-reflective coating (ARC) as another deposition and etch step. The mask generally consists of a multi-layer reflector stack, capping layer, buffer layer, absorber layer, and ARC. Tantalum nitride (TaXNY) is also used as an absorbing layer.

General Description

In the disclosed method, TaOXNY films are obtained either by special treatment (with oxygen or nitric oxides of the underlying patterned absorbing layer, which is TaXNY), or by first depositing tantalum oxide (TaXOY) then patterning this layer with a special treatment of nitrogen or nitric oxides (see Figures 2a and 2b). The special treatment can come in different forms, such as CVD, PECVD, IBD, EBD, implantation, doping, or e-beam assisted deposition. Depending on the diffusion constant of the oxygen or nitro oxide in the TaXNY film, a gradient index material is used to serve as both an absorber and an ARC (or an equivalently low reflective layer).

Another compatible process is similar to the traditio...