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Extended generator characterization without external probing for sub 100 nm technologies

IP.com Disclosure Number: IPCOM000129024D
Original Publication Date: 2005-Oct-25
Included in the Prior Art Database: 2005-Oct-25
Document File: 1 page(s) / 80K

Publishing Venue

Siemens

Related People

Juergen Carstens: CONTACT

Abstract

In semiconductor devices it is desirable and necessary to measure the behaviour of voltage generators under defined current load conditions for design analysis and process monitoring purposes. In recent years, the width of the devices scaled down, like in sub-100 nm technology, and the metal lines may be below optical resolution limit. Therefore, it has become challenging to do a proper probing since the metal lines are hard to locate and e.g. difficult to hit with probe tips. This idea proposes to add a programmable current source on semiconductor devices, which can be connected to various internal voltage generators. The current source can be programmed for arbitrary currents. It is suggested to implement a test mode which allows connecting the output of an internal generator to a pad (e.g. mask pin or FE-probing pad (frontend pad => a pad which is only accessible on wafer level during the so called frontend test and which is not accessible in the packaged device any more). Now, a current load can be applied at the pad while the generator voltage is measured through another pad by the tester. Therefore, probing inside the generator-circuitry is avoided; nevertheless an external current source and a DC (Direct Current) -Measurement unit is still required.

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Extended generator characterization without external probing for sub 100 nm technologies

Idea: Dr. Bernhard Knuepfer, DE-Munich; Martin Schnell, DE-Munich

In semiconductor devices it is desirable and necessary to measure the behaviour of voltage generators under defined current load conditions for design analysis and process monitoring purposes. In recent years, the width of the devices scaled down, like in sub-100 nm technology, and the metal lines may be below optical resolution limit. Therefore, it has become challenging to do a proper probing since the metal lines are hard to locate and e.g. difficult to hit with probe tips.

This idea proposes to add a programmable current source on semiconductor devices, which can be connected to various internal voltage generators. The current source can be programmed for arbitrary currents.

It is suggested to implement a test mode which allows connecting the output of an internal generator to a pad (e.g. mask pin or FE-probing pad (frontend pad => a pad which is only accessible on wafer level during the so called frontend test and which is not accessible in the packaged device any more). Now, a current load can be applied at the pad while the generator voltage is measured through another pad by the tester. Therefore, probing inside the generator-circuitry is avoided; nevertheless an external current source and a DC (Direct Current) -Measurement unit is still required.

Another possibility is an extension of two test modes...