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Method for magnetostatically coupled ferromagnetic films for hybrid integration of on-chip optical devices

IP.com Disclosure Number: IPCOM000130416D
Publication Date: 2005-Oct-24
Document File: 3 page(s) / 69K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for magnetostatically coupled ferromagnetic films for the hybrid integration of on-chip optical devices. Benefits include improved functionality, improved performance, and improved process simplification.

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Method for magnetostatically coupled ferromagnetic films for hybrid integration of on-chip optical devices

Disclosed is a method for magnetostatically coupled ferromagnetic films for the hybrid integration of on-chip optical devices. Benefits include improved functionality, improved performance, and improved process simplification.

Background

              Wafer-level hybrid integration must occur for optoelectronic hetero-structures grown on and released from III-V wafers with conventional silicon (Si) integrated circuits (ICs). An important criterion for successful hybrid integration is the high-yield transfer of optoelectronic hetero-structures from the III-V wafer to the silicon wafer. The optoelectronic devices must be held at designated locations after the structures are transferred to the Si wafer. All subsequent processing is performed as if only Si is involved. The complete hybrid wafer can be used for optical interconnection applications.

              Conventionally, a soft magnetic layer is deposited on an optical device and a hard magnetic layer is deposited and patterned on a Si IC wafer. The short-range interaction between magnetized hard-magnetic patterns and a soft-magnetic layer is too weak to pull an optical device into a designated location (see Figure 1).

      The phenomenon of soft-magnetic films being pinned by antiferromagnetic films is called exchange biasing. The material preparation processes are well established. The coercive field of a soft magnet is significantly increased by pinning the magnetic domains using an antiferromagnetic pinning layer.

 

Description

              The disclosed method is magnetostatically-coupled ferromagnetic films for hybrid integration of on-chip optical devices. An antiferromagnetic layer is required to orient the magnetization in soft ferromagnetic films. The use of magnetostatically coupled exchange-biased soft-magnetic films results in stronger coupling. The method enables the high-yield hybrid integration of optical devices with silicon ICs for optical interconnection (see Figure 2).

              The disclosed method can be implemented...