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Method for a nano-cushion to reduce stress in highly thermally conductive substrates during fabrication

IP.com Disclosure Number: IPCOM000130426D
Publication Date: 2005-Oct-24
Document File: 3 page(s) / 79K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for nano-cushion to reduce stress in highly thermally conductive substrates during fabrication. Benefits include improved functionality, improved thermal performance, improved reliability, and improved yield.

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Method for a nano-cushion to reduce stress in highly thermally conductive substrates during fabrication

Disclosed is a method for nano-cushion to reduce stress in highly thermally conductive substrates during fabrication. Benefits include improved functionality, improved thermal performance, improved reliability, and improved yield.

Background

      High thermally conductive films, such as diamond films, cannot be deposited on silicon (Si) directly due to severe wafer bowing problems as a result of stress in the films (see Figure 1).

Presently, no solution exists that can pass 300-mm wafer requirements.

General description

              The disclosed method is a nano-cushion stress-reducing buffer for use during the fabrication of highly thermally conductive films on silicon substrates. The buffer is made of aligned carbon nanotubes (CNTs).

      The key elements of the disclosed method include:

•             Fabrication of a nano-compliant layer comprised of aligned nanotubes utilizing a chemical vapor deposition (CVD) process

•             Deposition of a highly thermally conductive diamond film on the compliant layer of CNTs

•             Substrate comprised of a nano-layer and a highly thermally conductive layer stacked for the fabrication of active silicon circuits

Advantages

              The disclosed method provides advantages, including:
•             Improved functionality due to providing a compliant layer using nano-materials that enable the fabrication of highly thermally conductive films, such as diamond films, on silicon substrates

•             Improved functionality due to enabling microprocessors with an increased heat-flux density that enable the scaling of multiple cores

•             Improved thermal performance due to providing highly thermally conductive substrates

•             Improved thermal performance due to providing a passive solution that provides an increased cooling capability

•             Improved reliability due to lowering the stress in highly thermally conductive films deposited on silicon

•             Improved reliability due to providing a solution with no moving parts

•             Improved yield due to reducing bowing and warpage of th...