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Method for rapidly curing low-k dielectrics after patterning

IP.com Disclosure Number: IPCOM000131780D
Publication Date: 2005-Nov-18
Document File: 1 page(s) / 29K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for rapidly curing low dielectric constant (low-k) dielectric material layers after patterning. Benefits include improved performance and improved reliability.

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Method for rapidly curing low-k dielectrics after patterning

Disclosed is a method for rapidly curing low dielectric constant (low-k) dielectric material layers after patterning. Benefits include improved performance and improved reliability.

Background

              Conventionally, metal/low-k dielectric adhesive/cohesive failures can occur during the copper/dielectric integration process, such as chemical-mechanical polishing and thermal cycling.

              Rapid cure processing is typically performed before low-k dielectric layer patterning.

              The plasma patterning of conventional SiCOH-based low-k dielectrics typically induce some dipolar species, such as H2O and SiOH. They increase the dielectric constant of the patterned layer.

              After thermal curing, low-k dielectrics are porous and have weak mechanical strength, which can cause cohesive and adhesive failures during integration and packaging.

              Ultra-low-k materials are required for future-generation integrated circuit device manufacturing.               

Description

              The disclosed method is additional cure processing immediately following low-k dielectric patterning. The additional cure cycles can be one or more of the following processes:

•             Rapid thermal processing (RTP)

•             Plasma

•             Electron beam (e-beam)

•             Ultraviolet (UV) light

              The additional curing removes dipolar species induced during the patterning process,  optimizes the...