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Method for moisture removal and dielectric constant recovery by rapid annealing after CMP of Cu/low-k dielectrics

IP.com Disclosure Number: IPCOM000131781D
Publication Date: 2005-Nov-18
Document File: 1 page(s) / 8K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for moisture removal and dielectric constant recovery by rapid annealing after chemical-mechanical polishing (CMP) of copper (Cu)/low dielectric constant (low-k) dielectric layers. Benefits include improved functionality and improved performance.

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Method for moisture removal and dielectric constant recovery by rapid annealing after CMP of Cu/low-k dielectrics

Disclosed is a method for moisture removal and dielectric constant recovery by rapid annealing after chemical-mechanical polishing (CMP) of copper (Cu)/low dielectric constant (low-k) dielectric layers. Benefits include improved functionality and improved performance.

Background

              Conventionally, the CMP process during Cu/patterned low-k dielectric layer integration leads to an increase in the chip’s effective dielectric constant due to the introduction of moisture-related dipolar species. They cannot be removed completely by thermal annealing after passivation.

              Thermal annealing is conventionally applied after passivation of the low-k dielectric layer. Typical processes include the following:

•             Rapid thermal processing (RTP)

•             Exposure to ultraviolet light

•             Exposure to an electron beam

•             Combination of these processes

Description

              The disclosed method removes moisture and adjusts the dielectric constant of the intermetal low-k dielectric layer. The method applies the conventional thermal annealing processes after the CMP process step to effectively remove remaining moisture and the dipolar species. 

Advantages

              The disclosed method provides advantages, including:
•             Improved functionality due to adding a thermal annealing process following CMP
•             Improved...