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Optical Resolution Enhancements for Two-Dimensional Patterning Through Dual Exposure of Orthogonal Polarized Dipole Illuminators

IP.com Disclosure Number: IPCOM000132052D
Publication Date: 2005-Nov-30
Document File: 3 page(s) / 128K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that partitions a two-dimensional geometry into two orthogonal horizontal and vertical design pattern files and two masks. Benefits include enhancing the imaging contrast.

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Optical Resolution Enhancements for Two-Dimensional Patterning Through Dual Exposure of Orthogonal Polarized Dipole Illuminators

Disclosed is a method that partitions a two-dimensional geometry into two orthogonal horizontal and vertical design pattern files and two masks. Benefits include enhancing the imaging contrast.

Background

In high numerical aperture (NA) lithography, V-linear-polarized dipole illumination provides the best imaging contrast; however, it can optimize the image resolution only in one direction (V), where the pattern in the orthogonal direction (H) loses contrast.  This requires the design layout restriction to be parallel to the polarization direction, and to be orthogonal to the off-axis illumination pole-axis direction (see Figure 1).

Alternatively, the design layout restriction can be removed by using an azimuthal polarized quadruple illumination, from which the two-dimensional pattern imaging is enabled. However, the imaging contrast is degraded (~ 14% in the example of Figure 1).

General Description

The disclosed method partitions the original design layout (H to V split pattern) with the Optical Proximity Correction (OPC), and double exposes the H and V masks with the orthogonal polarization mode and the orthogonal dipole illuminator. In this dual orthogonal polarized dipole exposure scheme, the two-dimensional pattern achieves a high contrast imaging in both the H and V directions, as shown in Figure 2. A detailed process flow is shown in Figur...