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Method for pattern generation for an EUVL photomask

IP.com Disclosure Number: IPCOM000132107D
Publication Date: 2005-Dec-01
Document File: 2 page(s) / 9K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for pattern generation for an extreme ultraviolet lithography (EUVL) photomask. Benefits include improved functionality, improved performance, and improved process simplification.

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Method for pattern generation for an EUVL photomask

Disclosed is a method for pattern generation for an extreme ultraviolet lithography (EUVL) photomask. Benefits include improved functionality, improved performance, and improved process simplification.

Background

      Conventional photomask technology uses reflective light and Bragg diffraction mirrors to reflect the EUVL photons. An absorber is deposited on the mask blank and placed into a photomask lithographic tool. A pattern is written on resist material and processed to provide a pattern that is etched into the absorber and the resist material is stripped off. A simpler, less defect prone process is required.

      Conventional manufacturing steps for optical/EUVL photomasks include the following steps:

1.   The substrate is produced either by polishing for optical photomasks or by multilayer deposition for EUVL masks and an absorber/attenuator is placed on the surface of the mask.

2.   Blanks are sold in this form or coated with an e-beam/laser sensitive resist. If not already coated, the blanks are coated with resist material.

3.   The mask blank is exposed by a laser writer or an e-beam writer.

4.   The resist material is developed and the pattern is etched.

5.   The resist is then stripped off the mask and post inspections are preformed, such as pattern inspection, critical defect (CD) control, and repair.

General description

      The disclosed method generates photomask patterns on EUVL photomask blanks. The method greatly simplifies the mask making procedure and addresses the issues of mask cleanliness, mask cost, and pattern repair.

      The method creates a photomask pattern using localized heating of the EUVL photomask blank. It induces localized absorption by changing the form of the multilayer mirrors by causing diffusion of the multilayer interface or by forming a nonreflecting silicide.  

Advantages

              The disclosed method provides advantages, including:
•             Improved functionality due to providing an EUVL photomask
•         ...