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Improving Pattern Fidelity for low k1 Lithography

IP.com Disclosure Number: IPCOM000132122D
Publication Date: 2005-Dec-01
Document File: 2 page(s) / 153K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that quickly detects side-lobe defects in a lithographic mask. Benefits include improving the manufacturability of the lithography process.

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Improving Pattern Fidelity for low k1 Lithography

Disclosed is a method that quickly detects side-lobe defects in a lithographic mask. Benefits include improving the manufacturability of the lithography process.

Background

Phase-shift masks suffer from pronounced side-lobe defects; the detection of these side-lobe defects is necessary in order to drive an OPC engine that has the ability to enhance the lithographic depth of focus (DOF). Patterning defect liabilities appear in all low k1 lithography masks.

There is currently no accurate model-based method to detect side-lobe defects. Rule-based methods used to suppress the defects greatly over-compensate for the effect.

General Description

The disclosed method detects and suppress side-lobe defects when making low k1 lithographic masks (see Figure 1).  The steps for the disclosed method are as follows:

                   

  1. Based on patterning data from the focus and dose, generate a full resist calibration.
  2. Gauge the predicted side-lobes from a full resist calibration, and use this as input for an aerial image-based resist model.
    1. Include side-lobe defect layout instances typically observed in the calibration database.
    2. Include both symmetric and asymmetric side-lobe defects.
    3. Include on and off-target side-lobe defects for DOF analysis.
  3. Calibrate the bulk intensity at a single plane in the resist depth; this shows the highest contrast between side-lobe peak intensity and defect-free (low intensity) regions for each layout ins...