Browse Prior Art Database

Ordered Placement of Nanotubes and Nanowires in Predefined Locations on a Wafer Using a Combination of Patterned Surfaces and Langmuir-Blodgett Techniques

IP.com Disclosure Number: IPCOM000132123D
Publication Date: 2005-Dec-01
Document File: 2 page(s) / 59K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for the precise ordering and positioning of nanotubes and nanowires as they are deposited on the wafer from a solvent. Benefits include a solution that ensures the long-range (i.e. rough) orientation of all nanowire/nanotubes in the solvent.

This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 55% of the total text.

Ordered Placement of Nanotubes and Nanowires in Predefined Locations on a Wafer Using a Combination of Patterned Surfaces and Langmuir-Blodgett Techniques

Disclosed is a method for the precise ordering and positioning of nanotubes and nanowires as they are deposited on the wafer from a solvent. Benefits include a solution that ensures the long-range (i.e. rough) orientation of all nanowire/nanotubes in the solvent.

Background

The state-of-the-art for ordering and positioning nanotubes and nanowires is either randomly dispersing them on the substrate or growing them directly on the substrate in random directions from randomly positioned catalyst particles. Such approaches are only applicable to one nanotube/nanowire per device and one device per die solution; they cannot be easily extended to circuit/system levels.

General Description

The disclosed method precisely positions and orients nanotubes and nanowires in predefined circuits. Starting with a bare silicon wafer, thermal oxide (SiO2) serves as a hard mask for etching. Lithography patterns are then transferred by etching into the oxide film. Lastly, with the oxide serving as a hard mask, trenches are etched into the exposed silicon that serve as “place holders” for nanotube/nanowire placement. Since the surface of the trench is silicon
(i.e. different from SiO2, which is still in non-patterned areas), the difference is used to preferentially attract nanotubes and nanowires to the trench. For example, Figure 1 shows t...