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Method for high-density I/O packaging

IP.com Disclosure Number: IPCOM000144775D
Publication Date: 2007-Jan-06
Document File: 3 page(s) / 28K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for high-density input/output (I/O) packaging. Benefits include improved functionality, improved performance, and improved reliability.

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Method for high-density I/O packaging

Disclosed is a method for high-density input/output (I/O) packaging. Benefits include improved functionality, improved performance, and improved reliability.

Background

      Conventionally, I/O density in CPU packages is increased by decreasing the solder bump pitch and diameter. However, pitch reduction is limited by the solder stencil printing used to create substrate bumps (see Figure 1).

Description

      The disclosed method is high-density I/O packaging. The method routes fine pitch, high speed I/O bumps on a die to an interposer where fine-pitch wire bonds connect to the substrate (see Figure 2).

      The disclosed method includes an interposer with fine-pitch pads and traces. The pads on one end of the interposer match the fine-pitch I/O bumps on the die. The pads on the other end of the interposer are for fine-pitch wire bonding. The interposer must be very thin (~50 µm) and can be made of silicon or organic material. The interposer can be prelaminated or preattached to the substrate.

      The disclosed method can be implemented using the following steps:

1.   Attach fine pitch interposer (see Figure 3).

2.   Pick-and-place the anisotropic conductive film (ACF): A patch of ACF is pick-and-placed on the substrate (see Figure 4).

3.   Assemble the die: Attach a die on...