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PREPARATION OF BIS-BETA-ENAMINOKETONE AND BIS-BETA-DIKETIMINE METAL PRECURSORS STARTING FROM BIS-ACETYLACETONATE METAL PRECURSORS AND DEPOSITION OF METAL CONTAINING FILMS IS OF INTEREST FOR VARIOUS APPLICATIONS

IP.com Disclosure Number: IPCOM000182900D
Publication Date: 2009-May-08
Document File: 4 page(s) / 251K

Publishing Venue

The IP.com Prior Art Database

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PREPARATION OF BIS-BETA-ENAMINOKETONE AND BIS-BETA-DIKETIMINE METAL PRECURSORS STARTING FROM BIS-ACETYLACETONATE METAL PRECURSORS AND DEPOSITION OF METAL CONTAINING FILMS IS OF INTEREST FOR VARIOUS APPLICATIONS

Disclosed herein are non-limiting embodiments of compositions and methods useful in the manufacture of semiconductor devices.

In some embodiments, the present invention describes the synthesis of beta-enaminoketone(Z) and beta-diketimine(Z’) metal precursors (M(Z)n, or M(Z’)n) starting from metal beta-diketonates. Wherein M is metal preferably selected from Ca, Sr, Ba, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Hf, Ru, Rh, Ir, Pd, Pt, Au, Ag, Al, Ga, Ge, La, Ce, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu. Metal beta-diketonates were treated with H2NR1 to result in metal beta-enaminoketonate precursors. Metal beta-enaminoketonates were treated with nH2NR1 (symmetric) or nH2NR2 (un-symmetric) to obtain metal beta-diketiminates precursors (where n = 2 or 3). In some embodiments, the  precursors may be selected from the group consisting of compounds according to formulae as described below:

Example 1

-     wherein M is divalent metal preferably selected from Ca, Sr, Ba, Cr, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Pt, Sm, Eu, Tm, Yb;

-     wherein each R1, R2, R3, and R4 is independently selected from:

a.         Hydrogen;

b.         Linear and branched C1-C10 alkyl, alkenyl, alkynyl and silyl groups, which are independently substituted or unsubstituted;

-     wherein L can be neutral monodentate or bidentate or tridentate ligands; n = 0, 1, 2, 3

Example 2

-     wherein M is a trivalent metal preferably selected from Ti, V, Cr, Mn, Fe, Zr, Hf, Ru, Rh, Ir, Al, Ga, Ge, La, Ce, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu;

-     wherein each R1, R2, R3, and R4 is independently selected from:

a.         Hydrogen;

b.         Linear and branched C1...