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STRUCTURE FOR HIGH TEMPERATURE CAPABLE LOGIC DEVICES USING SOLID OXIDE ELECTROCHEMICAL CELLS TO FORM LOGIC GATES

IP.com Disclosure Number: IPCOM000194592D
Publication Date: 2010-Apr-01
Document File: 4 page(s) / 137K

Publishing Venue

The IP.com Prior Art Database

Abstract

The invention proposed by the inventors is a technology of logic gates formed from solid oxide electrochemical cells.

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STRUCTURE FOR HIGH TEMPERATURE CAPABLE LOGIC DEVICES USING SOLID OXIDE ELECTROCHEMICAL CELLS TO FORM LOGIC GATES

Logic gates (such as a NAND gate) are formed using solid oxide electrochemical cells. This logic gate is capable of functioning within the hot box and allows local login functions to be calculated within the high temperature space.

There are many applications for use of logic devices in modern engineering practice. Many of these applications involve extreme environments such as high temperature or high radiation environments. The solid oxide fuel cell operating temperature of the state of the art is one example of an extreme environment of this nature, since the operating temperature is nominally 800C.

     Extreme environments are problematic in that conventional semiconductor technologies will not function (or will not function for very long) in under such conditions. This means that schemes of distributed control and/or measurement may not be implemented. One clear example of this is the measurement of fuel cell voltages. The only method available today for measuring these voltages is to pass wires for each point of interest to a cooler zone where electronics can be placed to make measurements.

Prior Art: In the case of cell voltage measurement, the only solution available today is passing N+1 wires out of the hot zone in order to make N measurements from series-wired elements. And, this is problematic in that the wiring represents cost and creates paths for heat and reactant gas leakages.

Invention: The invention proposed by the inventors is a technology of logic gates formed from solid oxide electrochemical cells.

In a specific application of this technology, the inventors propose to connect a multiplexer (MUX) structure, formed of electrochemical logic devices, to N fuel cells in a hot zone, wired in series. The multiplexer structure may be referenced by 3 wires - clock pulse; output wire; and ground. And, via the output wire, as the clock pulse wire is clocked, the MUX will be triggered to reference each cell of the arrangement in sequence. When that cell is above a nominal voltage, the output wire will read high. When that cell is below a nominal voltage, the output wire will read low.

The following figures illustrate how to create a NAND gate from solid oxide electrochemical cells. The detailed schematic of a MUX structure is not provided - however since a) the NAND gate is well documented in the literature as a universal gate (one can produce all other types of gates from a NAND gate); and b) since a MUX can be produced from logic gates - this is not considered to be critical to the implementation of the invention.

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Reference from Wikipedia.org:
"The nand gate is a universal gate in the sense that any Boolean function can be implemented by nand gates."

Reference from Wikipedia.org: Logic diagram for a 4 input multiplexer. The figure shown here is a 4 input MUX with two address bits as inputs. The inventor...