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Method and System for Introducing Lateral Delta Doping at the Tip of a MOSFET Source or Drain Extension

IP.com Disclosure Number: IPCOM000195050D
Publication Date: 2010-Apr-20
Document File: 3 page(s) / 68K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for introducing lateral delta doping at the tip of a MOSFET source or drain extension is disclosed.

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Method and System for Introducing Lateral Delta Doping at the Tip of a MOSFET Source or Drain Extension

Disclosed is a method and system for introducing lateral delta doping at the tip of a MOSFET source or drain extension.

In an instance of the method and system disclosed herein, a disposable spacer is used for introducing the lateral delta doping as shown in Fig. 1. In this case, prior to an extension implant, a disposable spacer comprising nitride material is deposited on the MOSFET. Thereafter, the extension and a halo are implanted. A main source or drain spacer comprising nitride material is deposited followed by the source drain implants. Thereafter, the MOSFET is annealed using Rapid Thermal Annealing (RTA). The implanted nitride material is then etched off using hot phosphorus liquid. Alternatively, a vertical Reactive-Ion Etching (RIE) process can be used for etching off the nitride material. Subsequently, a Delta halo is implanted using a vertical halo implant. A small silicide proximity spacer is then placed and, if needed, a vertical implant of the same type dopant as the extension may be applied to improve contact or series resistance. Thereafter, the MOSFET is subjected to Laser Spike Annealing (LSA), or an equivalent difussionless anneal to form silicide, stress liner and metal layers on the MOSFET.

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Figure 1

In another instance of the method and system disclosed herein, the delta halo is introduced without the use of the disposable s...