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Apparatus for Reducing Base-Emitter Voltage Mismatch and Thermal Mismatch in NPN Transistors

IP.com Disclosure Number: IPCOM000197732D
Publication Date: 2010-Jul-20
Document File: 2 page(s) / 46K

Publishing Venue

The IP.com Prior Art Database

Abstract

An apparatus is provided for reducing base-emitter voltage (VBE) mismatch and thermal mismatch in NPN transistors. The apparatus is formed by tying ends of an NPN transistor together to form a circular emitter. The circular emitter mitigates voltage gradients and thermal gradients along the length of the NPN transistor.

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Apparatus for Reducing Base-Emitter Voltage Mismatch and Thermal Mismatch in NPN

Transistors

Disclosed is an apparatus for reducing base-emitter voltage (VBE) mismatch and thermal mismatch in NPN transistors.

Typically, temperatures measured along lengths of large, multiple striped NPN transistors are not constant. The varying temperatures result in thermal hotspots across different regions in an NPN transistor.

The figure illustrates the apparatus for reducing VBE mismatch and thermal mismatch in NPN transistors. The apparatus is formed by tying ends of an NPN transistor together
in a CBEBC configuration, to form a circular emitter. The circular emitter mitigates voltage gradients and thermal gradients along the length of the NPN transistor.

Figure

Thus, the circular emitter reduces VBE mismatch in NPN transistors by mitigating the voltage gradients along the length of the NPN transistor. Further, the circular emitter also reduces thermal mismatch formed due to 3D nature of heat flow in NPN transistors

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by mitigating the thermal gradients along the length of the NPN transistor.

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