The Prior Art Database and Publishing service will be updated on Sunday, February 25th, from 1-3pm ET. You may experience brief service interruptions during that time.
Browse Prior Art Database

Method and Structure for Forming System-On-Chip Including High-Performance Device and Low-Power Device

IP.com Disclosure Number: IPCOM000198590D
Publication Date: 2010-Aug-10
Document File: 6 page(s) / 60K

Publishing Venue

The IP.com Prior Art Database


This invention provides a method and structure for integrating various devices on the same chip in system-on-chip technology. Core approaches to improving current processes include: forming SONOS flash memory and logic FET on the same chip, forming floating gate flash memory and logic FET on the same chip, forming a recessed channel DRAM and logic FET on the same chip, and forming a decoy device or Depletion Mode FET and logic FET on the same chip.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 51% of the total text.

Page 1 of 6

Method and Structure for Forming System -On-Chip Including High-Performance Device

and Low-Power Device

The advance of semiconductor technology requires continued shrinkage of device

dimension and integration of devices with various functions on the same chip. For

example, a system-on-chip (SoC) typically includes high-performance logic devices,

low-power memory devices, and passive devices such as capacitors and resistors. One of the challenges here is that different devices have different characteristic

requirements: logic devices usually have very aggressively shrunk gate length for

high-performance; whereas, small gate length devices may not be suitable for memory

application due to excessive leakage current. Using long channel devices suppresses

leakage current, but such an approach is at the cost of low device density which

contradicts the high-density requirement of memory application.

Another challenge of fabricating SoC is that different devices have different gate stacks.

For example, the gate stack of a flash memory device can be dramatically different from

the conventional logic of field-effect transistor (FET). A flash memory device typically

comprises more layers, including the control gate layer, charge barrier layer, floating

gate layer, and tunneling dielectric layer. In contrast, a logic FET gate stack comprises

a gate dielectric and a gate conductor. Having different gate stacks poses severe

challenges in gate patterning. Separate processes, some of which may not even be

compatible with standard complementary metal-oxide semiconductor (CMOS)

processes, form the different types of devices. Consequently, known approaches have

several drawbacks such as process complexity, increased cost, etc.

Disclosed is a solution for improving the methods for integrating various devices on the

same chip. The key process steps are described in the typical embodiments. Compared

with prior art, this method has following advantages.
• Independent tunability of gate stack for different devices
• Excellent compatibility with standard CMOS

Embodiment #1: Forming SONOS flash memory and logic FET on the same chip


Page 2 of 6

The method:
A. Requires that a logic FET and a non-logic FET (DRAM, flash, resistors, etc.) are

first formed by standard CMOS process well known in the art. Each device

comprises a gate, channel, and source/drain. Spacers are also formed on gate

sidewalls. An inter-layer dielectric (ILD) (e.g., oxide) is deposited and planarized.
B. Uses a block mask to expose the non-logic device. The exposed gate of the

non-logic device is then removed by etch. For example, when the original gate

comprises polysilicon and silicon oxide, a wet etch containing ammonia can be

used to remove polysilicon and hydrofluoric acid can be used to remove gate

C. Removes the gate in the non-logic region to expose a channel of non-logic

devices. In some embodiments, the channel is recessed to increase gate length

to suppress leakage cur...