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Method for Depositing Scaled Interface Layer (IL) Between High ‘K’ Dielectric Material Using Remote Plasma Process

IP.com Disclosure Number: IPCOM000198809D
Publication Date: 2010-Aug-17
Document File: 4 page(s) / 41K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method is disclosed for depositing scaled interfacial layer (IL) between high ‘k’ dielectric materials such as HfSiOx and HfOx and Si channel region to achieve thin Tinv layer. The scaled IL is deposited using a remote plasma process.

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Method for Depositing Scaled Interface Layer (IL) Between High 'K' Dielectric Material Using Remote Plasma Process

Disclosed is a method for depositing scaled interfacial layer (IL) between high 'k' dielectric materials such as HfSiOx and HfOx and Si channel region to achieve thin Tinv layer as shown in fig. 1. The scaled IL is deposited using a remote plasma process.

Figure 1

In accordance with the method disclosed herein, plasma nitridation occurs in a chamber and is subsequently transferred to the wafer. The remote plasma process involves lowering argon flow regime (500 sccm - 750 sccm) and lowering nitrogen flow (400 sccm - 600 sccm) at higher pressure such as 0.8T at 10 sec, to scale IL film thickness to 6-7A. The remote plasma process also scales Tinv Layer by approximately 1A without reducing electron/hole mobility and without increase in threshold voltage.

Fig. 2, fig.3, fig.4 and fig. 5 provide detailed experimental results to scale IL in accordance with the method disclosed herein. The experimental results shows that IL is scaled down to 5-7 A as compared to 12-14 A IL thickness currently used in 32 nm technology node. The experimental results also shows that 0.8A - 1A of Tinv scaling is achieved by scaling down IL.

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