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Method and System for Fabricating Silicon Formed Cavity in Micro-Electro-Mechanical Systems (MEMS) with AlCuSi Electrodes

IP.com Disclosure Number: IPCOM000199063D
Publication Date: 2010-Aug-25
Document File: 3 page(s) / 80K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for fabricating silicon formed cavity in Micro-Electro-Mechanical Systems (MEMS) with AlCuSi electrodes is disclosed.

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Method and System for Fabricating Silicon Formed Cavity in Micro -Electro-Mechanical Systems (MEMS) with AlCuSi Electrodes

Disclosed is a method and system for fabricating silicon formed cavity in Micro-Electro-Mechanical Systems (MEMS) with AlCuSi electrodes. Silicon (Si) is added to an aluminum (Al) film to saturate the Si in the Al film thereby eliminating high density effects in an AlSi alloy. In an instance, 1% of Si may be added to the Al film to make the AlSi alloy.

PVD Si TiN/AlCuSi/TiN

BA (CU) Oxide

BA (CU) Oxide

Figure 1

As depicted in fig. 1, Al is doped for forming an alloy with dielectric (SiO2) spacer on a

PVD Si TiN/AlCuSi/TiN

1

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sidewall of the TiN/AlCuSi/TiN wire. The resulting alloy blocks adverse reaction by Si. In addition, a Si cavity is formed above or below the TiN/AlCuSi/TiN wire. The Si cavity is shown as "PVD Si" in fig.1. This phenomenon may be generalized to any wire conductor with reactive cavity material. In a scenario, Al may be doped with Si and the resulting AlSi alloy may be placed in direct contact with the Si cavity material thereby forming a clean interface without any precipitates. In such a scenario, 1% of Si may be added in AlCu for forming the AlCuSi alloy wherein enough Si is added in the AlCuSi metal alloy for saturation. As depicted in fig. 2, which shows top view images of Silicon over TiN/AlCuSi/TiN wires, this results in non-reaction from Si to the AlCuSi alloy.

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