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Method and System for Fabricating a Sidewall Capacitor

IP.com Disclosure Number: IPCOM000199064D
Publication Date: 2010-Aug-25
Document File: 5 page(s) / 227K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for fabricating a sidewall capacitor is disclosed. The fabrication process of the sidewall capacitor provides better design flexibility along with easier process control.

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Method and System for Fabricating a Sidewall Capacitor

Disclosed is a method and system for fabricating a sidewall capacitor. Fig. 1 illustrates initial steps taken for fabricating the sidewall capacitor.

Figure 1

As illustrated in fig. 1, vias are formed at step 1. Subsequently, adhesion layer 201 is deposited on a surface. Adhesion layer 201 may be made of, but is not limited to, Tantalum Nitride (TaN), Titanium Nitride (TiN) and Tungsten Nitride (WN). Thereafter, at step 2, metallic liner 202 is deposited on adhesion layer 201. Metallic liner 202 may

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be made of, but is not limited to, Ruthenium (Ru), Cobalt (Co), Iridium (Ir), Gold (Au) and Tantalum (Ta). Subsequently, high K dielectric material 301 is deposited above metallic liner 202 at step 3. High K dielectric material 301 may be made of, but is not limited to, Oxide-Nitride-Oxide, SiO2, TaO5, PSiNx, Si3N4, SiON, SiC, TaO2, ZrO2, HfO2 and Al2O3.

Figure 2

Subsequent to forming high K dielectric material 301, the vias are filled with Copper (Cu) at step 4 as shown in fig. 2. Thereafter, Copper is recessed at step 5 in order to achieve a structure shown in fig. 2. Further, as depicted in fig. 3, dielectric layer 601 is deposited above the structure as shown in step 6. Subsequently, metal layers, such as M2 and Mx+1 are formed above the vias in step 7 to complete the fabrication process of the sidewall capacitor.

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