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High speed non-volatile memory by association of RAM and non-volatile memory

IP.com Disclosure Number: IPCOM000199647D
Publication Date: 2010-Sep-13
Document File: 2 page(s) / 142K

Publishing Venue

The IP.com Prior Art Database

Abstract

High speed non-volatile memory by association of a volatile and non-volatile memories

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High speed non-volatile memory by association of RAM and non -volatile memory

Disclosedis an apparatus providing a capability for a high-speed non-volatile memory by association of volatile and non-volatile memories.

Regular non-volatile memories are typically slower than random access memory (RAM) type memories. Used as storage medium RAM is typically faster than a hard drive but must be addressed in blocks, like hard drives. Because of block access requirements RAM cannot be used to directly run programs.

In one example, a current proposed solution to increase performance of memory uses a type of buffer. The proposed solution uses a buffer, a cache memory, between input and a flash memory. The proposed buffer solution may increase performance for small writes but typically not for massive process, because the buffer is limited. Another issue with the proposed solutions is power loss, when use of the cache will be lost and data corruption may happen. In another

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roposed solution, a rack of RAM is synchronized in a secondary flash storage. This proposed

solution is typically complex, demanding sophisticated electronic circuits and processing.

Embodiments of the disclosed provide an association of a RAM cell with a non-volatile memory cell. Using this association provides a capability to take advantage of high speed of RAM memories and persist data after power loss. The disclosed apparatus is a combination of two types of memories in the form of volatile memory for high speed and non-volatile memory for

  ersistence. A combination of RAM including (dynamic random access memory (DRAM), static random access memory (SRAM), synchronous dynamic random access memory (SDRAM), and CPU registry) and non-volatile (Flash, ferroelectric random access memory (FeRAM), nano-RAM or nanotube-based nonvolatile random access memory (

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phase change memor

provides a capability to use a combination of DRAM and phase change memory.

Phase change materials have been known for forty years and are widely used in rewritable compact discs (CDs) and digital versatile discs (DVDs). Researchers have discovered an alloy suitable for memory construction. After melting a phase change (PC) material when allowed to co...