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Method of Protecting Tungsten Contacts in a Ferroelectric Random Access Memory (FRAM) using an Oxidation Barrier

IP.com Disclosure Number: IPCOM000200128D
Publication Date: 2010-Sep-29
Document File: 4 page(s) / 142K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method of protecting tungsten (W) contacts in a Ferroelectric Random Access Memory (FRAM) using an oxidation barrier is provided. The method involves providing permanent and temporary oxidation barriers for protecting the "W" contacts.

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Method of Protecting Tungsten Contacts in a Ferroelectric Random Access Memory (FRAM) using an Oxidation Barrier

Disclosed is a method of protecting tungsten (W) contacts in a Ferroelectric Random Access Memory (FRAM) using an oxidation barrier.

The method protects the "W" contacts during FRAM oxidation by providing permanent and temporary oxidation barriers. Fig. 1 and Fig. 2 illustrates an instance of the method disclosed, where a permanent oxidation barrier is provided for protecting the "W" contacts. The method involves removing a non-conformal cap at M1 liner after O2

annealing, and then proceeding with the standard Cu process, as illustrated in Fig. 1. Alternatively, the non-conformal cap at M1 is partially removed after O2 annealing, and then the standard Cu process is performed as illustrated in Fig. 2.

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Figure 1


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Figure 2

In another instance of the method, a permanent Pt oxidation barrier is formed as illustrated in Fig. 3. The Pt oxidation barrier is a conducting oxidation barrier. The method involves recessing the "W" contacts after performing Chemical-Mechanical

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Polishing (CMP) on the "W" contacts. Thereafter, "Pt" is deposited on the "W" contacts. Further, a layer of Cu is metalized on the permanent Pt oxidation barrier, as illustrated
in Fig. 4.

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Figure 3


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