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Method and System for Monitoring Semiconductor Junction Temperature

IP.com Disclosure Number: IPCOM000200729D
Publication Date: 2010-Oct-26
Document File: 1 page(s) / 34K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for simultaneously monitoring and measuring junction temperature under Direct Current (DC) and Electrostatic Discharge (ESD) transient events is disclosed.

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Method and System for Monitoring Semiconductor Junction Temperature

Method and System for Monitoring Semiconductor Junction TemperatureMethod and System for Monitoring Semiconductor Junction Temperature

Disclosed is a method and system for simultaneously monitoring and measuring

junction temperature under Direct Current

transient events.

To monitor and measure junction temperature, a small sense diode is integrated with a high ESD diode as illustrated in the figure. The small sense diode may also be integrated with other devices such as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and resistors to monitor and measure the junction temperature of these devices.

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Figure

Initially, the sense device is characterized and modeled at different temperatures. Thereafter, both the main device and the sense device are connected and a low current stimulus is applied to the sense device. Subsequently, a DC or transient stimulus is applied to the main device. During DC or ESD testing of the large diode, the sense diode is measured simultaneously using a low voltage low current setup. The current/voltage output of the sense diode is then used to extract the temperature at the

(assuming the sense diode has the same temperature as the main device).

Thus, the method and system disclosed herein provides an on-chip semiconductor device junction temperature monitor.

(DC) and Electrostatic Discharge (ESD)

junctio...