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Method of Producing High Density Body-contacted Standard Cell Layout Architecture in Silicon on Insulator (SOI) Technology

IP.com Disclosure Number: IPCOM000200731D
Publication Date: 2010-Oct-26
Document File: 6 page(s) / 640K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method is provided to producing high density body-contacted standard cell layout architecture in Silicon on Insulator (SOI) technology.

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Method of Producing High Density Body

Method of Producing High Density BodyMethod of Producing High Density Body -

---contacted Standard Cell Layout

contacted Standard Cell Layoutcontacted Standard Cell Layout

contacted Standard Cell Layout

Architecture in Silicon on Insulator

Architecture in Silicon on InsulatorArchitecture in Silicon on Insulator

((((SOI

SOISOI

SOI)

))

TechnologyTechnologyTechnology

Technology

Disclosed is a method for producing high density body-contacted standard cell layout architecture in Silicon on Insulator (SOI) technology.

Typically, in SOI technologies, body-contacted FETs have different structure than FETs in bulk technologies. Traditional standard cells in bulk technologies use symmetrical layout architecture. The diffusion layer, i.e. RX layer on the cell boundaries is always symmetrical so that it may be shared with adjacent cells. However, this architecture causes DRC violations if used in SOI technologies. In order to mitigate DRC violations extra space is provided on cell boundaries, thereby increasing the total layout area and reducing the decoupling capacitance on power nets.

The method disclosed herein, produces high density body-contacted standard cell layout architecture. The high density body-contacted standard cell layout architecture may be a LC body-contacted standard cell or a BC body-contacted standard cell.

In an instance, the method implements an asymmetrical architecture to produce LC body-contacted standard cells. Each of the LC body-contacted standard cells has two types of cell boundaries. The layers near the cell boundaries are designed to abut any standard cell with any one of the two types of cell boundaries with any other standard cell with any one of the two types of cell boundaries without causing DRC violations. Further, filler cells may also be adjusted accordingly.

Fig. 1 illustrates a LC body-contacted standard cell layout architecture. The LC body-contacted standard cell with an asymmetrical boundary has a Long RX for body contact with 2 square stud contacts (labeled as "CA" in Fig. 1 and Fig. 8) and a layer of nFET Body Contact regions without BH implant (labeled as BPNH layer in Fig. 1 and Fig. 6) and a Short RX for body contact with 1 square stud contact without touching the layer of nFET Body Contact regions. The method provides a DRC clean LC body-contacted standard cell layout where the Short RX becomes Long...