Hydrogen Barrier for Ferro-electric Capacitor
Publication Date: 2010-Oct-26
The IP.com Prior Art Database
AbstractA mechanism for providing a barrier for migration of hydrogen into Ferro-electric Capacitors is disclosed.
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Disclosed is a mechanism for providing a barrier for migration of hydrogen into Ferro-electric capacitors. The mechanism involves depositing a layer of AL2O3 by atomic layer deposition (ALD) process in a conformal manner over a Ferro-electric Capacitor. The layer of AL2O3 fills voids in a Piezoelectric Transducer (PZT) layer of the Ferro-electric Capacitor. Further, the AL2O3 layer reduces migration of hydrogen provided by a SiN cap and V1 oxide layer. A diagram illustrating various layers of a Ferro-electric Capacitor is shown in the figure.
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Thus, the disclosed mechanism avoids degradation of the Ferro-electric Capacitor due to hydrogen. Further, performance of the Ferro-Electric Capacitor is improved.
Hydrogen Barrier for Ferro
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