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Hydrogen Barrier for Ferro-electric Capacitor

IP.com Disclosure Number: IPCOM000200732D
Publication Date: 2010-Oct-26
Document File: 1 page(s) / 50K

Publishing Venue

The IP.com Prior Art Database

Abstract

A mechanism for providing a barrier for migration of hydrogen into Ferro-electric Capacitors is disclosed.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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electric Capacitor

Disclosed is a mechanism for providing a barrier for migration of hydrogen into Ferro-electric capacitors. The mechanism involves depositing a layer of AL2O3 by atomic layer deposition (ALD) process in a conformal manner over a Ferro-electric Capacitor. The layer of AL2O3 fills voids in a Piezoelectric Transducer (PZT) layer of the Ferro-electric Capacitor. Further, the AL2O3 layer reduces migration of hydrogen provided by a SiN cap and V1 oxide layer. A diagram illustrating various layers of a Ferro-electric Capacitor is shown in the figure.

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Figure

Thus, the disclosed mechanism avoids degradation of the Ferro-electric Capacitor due to hydrogen. Further, performance of the Ferro-Electric Capacitor is improved.

Hydrogen Barrier for Ferro

Hydrogen Barrier for FerroHydrogen Barrier for Ferro -

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electric Capacitorelectric Capacitor

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