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Low Temperature Si Containing Films Using a Monoamino Type Silicon Precursor

IP.com Disclosure Number: IPCOM000201028D
Publication Date: 2010-Nov-04

Publishing Venue

The IP.com Prior Art Database

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LOW TEMPERATURE Si CONTAINING FILMS USING A MONOAMINO TYPE SILICON PRECURSOR

Disclosed herein are non-limiting embodiments of methods and compositions for manufacture of devices in the semiconductor, photovoltaic, flat panel, or LCD-TFT industries.

Summary

The deposition of SiO2 and SiN films at low temperature is desired for many applications in the semi-conductor industry.  Until now, many types of precursors have been used, such as tris or bis-aminosilane, silanol, isocyanate, halogen, for deposition in thermal or plasma CVD or ALD, or other deposition technique.  The present invention comprises the use of monoaminosilane to deposit Si-based films (SiO2, SiN, or any other silicate film).  Such molecules are considered because of their high volatility (boiling point around 80C), their high reactivity, and the good quality of films that can be obtained due to the low number of ligand (that may be source of N and C impurities).

Problem Solved By the Invention

The deposition of SiO2 or SiN (or any other silicon containing film) films at low temperature is desired for many applications in the semi-conductor industry.  Until now, many types of precursors have been used, such as tris or bis-aminosilane, silanol, isocyanate, halogen, for deposition in thermal or plasma CVD or ALD, or other deposition technique.  For depositions at low temperature (<100C), plasma is needed due to the low reactivity of the silicon precursors.  However, plasma should ultimately be replaced by a thermal process.  Some precursors show promises, but best results are obtained with moisture as a co-reactant, and this molecule is difficult to purge, generating a decrease of throughput.  In other cases, the deposition rate is too low.

Solution of the Problem According to the Invention

It is proposed to use a new kind of silicon molecules: monoaminosilane.

Formula (I)    SiH3(NR1R2)

Such molecules show a high reactivity, which will allow the deposition of films at low temperature, and are ALD-mode compatible.  They are highly volatile and will thus be easy to provide to the reaction chamber.  The high number of Si-H bonds increased the reactivity of the molecule, which could enable to deposit films at low temperature.  As the number of ligand is little, impurity content (C mainly) will be reduced compare to the chemistries currently used.

The synthesis of the molecule is an important point of this invention, as an easy route is proposed.  This new synthesis route will enable to prepare the molecule from easily accessible products, which will decrease the time required for its synthesis, and decrease the financial burden.

Detailed Description of Various Embodiments of the Invention

The new monoaminosilane molecules have some interesting properties for depositions, including high deposition rates, corresponding high throughput.  However, it cannot be cost-effectively synthesized the same way than tris or bis-aminosilane, due to the hazardousness and lack of sou...