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Dielectric Buffer Layer for Image Reversal Trench FCD Modulation

IP.com Disclosure Number: IPCOM000201784D
Publication Date: 2010-Nov-23
Document File: 2 page(s) / 109K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a tone inversion process. The tone inversion process includes a dielectric cap layer (TEOS) on top of TIN for image reversal trench FCD modulation. The dielectric cap layer on top of TiN shrinks the trench FCD at etch by controlling the plasma etch chemistry. Further, the dielectric cap layer acts as masking layer during TiN etch. Also, the dielectric cap layer enables a thin layer of OPL if necessary to eliminate the OPL wiggling problem.

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Dielectric Buffer Layer for Image Reversal Trench FCD Modulation

Disclosed is a tone inversion process. The tone inversion process includes a dielectric cap layer (TEOS) on top of TIN for image reversal trench FCD modulation as shown in fig.1.

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Figure 1

The dielectric cap layer on top of TiN shrinks the trench FCD at etch by controlling the plasma etch chemistry. Further, the dielectric cap layer acts as masking layer during TiN etch. Also, the dielectric cap layer enables a thin layer of OPL if necessary to eliminate the OPL wiggling problem.

Following figures shows key process steps for trench final CD modulation. Although, the process is described for tone inversion, the method can be used for non-tone inversion trench etch process as well.

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Figure 2: OPL etch

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Figure 3: TEOS etch


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Figure 4: TiN etch


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Figure 5: Dielectric etch

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