Browse Prior Art Database

Method and System for High Power Modeling of Non-Linearities Corresponding to a Substrate in a Radio Frequency (RF) Switch

IP.com Disclosure Number: IPCOM000202347D
Publication Date: 2010-Dec-14
Document File: 5 page(s) / 281K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for high power modeling of non-linearities corresponding to a substrate in a Radio Frequency (RF) switch is disclosed. The method involves isolating substrate based non-linearities from FET based non-linearities of the RF switch. The substrate based non-linearities may be isolated from the FET based non-linearities for an improved modeling of the total non-linearities of the RF switch.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 52% of the total text.

Page 01 of 5

Method and System for High Power Modeling of Non -Linearities Corresponding to a Substrate in a Radio Frequency (RF) Switch

Disclosed is a method and system for high power modeling of non-linearities corresponding to a substrate in a Radio Frequency (RF) switch. Usually, RF switches are integrated with a substrate such as a Silicon-On-Insulator (SOI) for performance improvement of the RF switches. The RF switches may be RF Transmitter switches or RF Receiver switches. The RF switches may be integrated with the substrate for isolation of the RF switches from other parts of a circuit. However, due to the presence of the substrate, non-linearities may arise in the RF switches. The non-linearities may arise due to parasitic surface conduction caused by the presence of fixed charges at the interface of Si/SiO2. Further, the fixed charges lead to formation of an inversion layer which contributes to the non-linearities. Therefore, an identification of the non-linearities introduced by the substrate in the RF switches is required.

The method and system disclosed herein involves isolating substrate based non-linearities from FET based non-linearities of a RF switch. The substrate based non-linearities may be isolated from the FET based non-linearities for an improved modeling of the total non-linearities of the RF switch. The substrate based non-linearities are identified using a RF device having a RX-RX structure as shown in Fig. 1.

(This page contains 00 pictures or other non-text object)

Figure 1

As shown in Fig. 1, size of the RF device is 200µm x 28µm (WxL). The RX region of

the RF device has 'n+' doping without any FET layers. The RF device may be subjected to load pull measurements for obtaining harmonics. The source of the harmonics obtained from the load pull measurements is the inversion layer present in

1


Page 02 of 5

the substrate. The harmonics may be predicted by performing a simulation on an equivalent circuit of the RF device as shown in Fig. 2.

(This page contains 00 pictures or other non-text object)

Figure 2

As shown in Fig. 2, a lateral coupling capacitor Cti and a SX model (including Csx and Rsx) are obtained. Further, a capacitor Cbox is implemented as a Metal-Oxide- Semicond...