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Optical CMOS Image Sensor with a Planar Collection Area and a Non-Planar Charge Transfer Device

IP.com Disclosure Number: IPCOM000202451D
Publication Date: 2010-Dec-15
Document File: 3 page(s) / 55K

Publishing Venue

The IP.com Prior Art Database

Abstract

An optical CMOS image sensor including a planar collection area and a non-planar charge transfer device is disclosed. The non-planar charge transfer device is integrated into the optical CMOS image sensor for reducing the size of the charge transfer device.

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Optical CMOS Image Sensor with a Planar Collection Area and a Non -Planar Charge Transfer Device

Disclosed is an optical CMOS image sensor including a planar collection area and a non-planar charge transfer device.

The non-planar charge transfer device, for example, a MuGFET transfer device or a FinFET transfer device, is integrated into the optical CMOS image sensor. Integrating the non-planar charge transfer device with the optical CMOS image sensor reduces the size of the charge transfer device. The reduced size of the non-planar charge transfer device in turn improves optical efficiency and reduces cost. Fig. 1 and Fig. 2 illustrate a front view and a top view of an optical CMOS image sensor including the planar collection area and a FinFET transfer device formed on a Silicon-On-Insulator (SOI) substrate. The FinFET is etched in Partially Depleted Silicon-On-Insulator (PD-SOI).

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Figure 1


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Figure 2

Fig. 3 and Fig. 4 illustrate a front view and a top view of an optical CMOS image sensor including the planar collection area and a FinFET transfer device, etched in a bulk semiconductor substrate.

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Figure 3


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Figure 4

Fig. 5 and Fig. 6 illustrate a front view and a top view of an optical CMOS image sensor with a charge well bui...