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Temperature Inversion Compensation by Means of Variable Supply Voltage

IP.com Disclosure Number: IPCOM000205690D
Publication Date: 2011-Apr-04
Document File: 3 page(s) / 27K

Publishing Venue

The IP.com Prior Art Database

Abstract

Modern semiconductor manufacturing technology shows temperature inversion effect when the electrical signal paths are “slower” at cold temperature then at hot due to combination of MOSFET parameters. Normal IC functioning creates device self-heating which allows to shorten the junction temperature range during the design. This allows faster and easier design closure. During the start-up (power-up and boot) the die is cold and the circuits on-die are “slow”, considering the temperature inversion effect. This forces the design to make the closure at low temperature regardless of the said above self-heating. We propose to allow over-drive level system supply voltage, provided to the IC during the start-up period when the chip is cold, to compensate for the circuit performance degradation due to temperature inversion effect, and get back to spec system supply voltage when the IC got warmed.

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Temperature Inversion Compensation by Means of Variable Supply Voltage

Abstract

Modern semiconductor manufacturing technology shows temperature inversion effect when the electrical signal paths are “slower” at cold temperature then at hot due to combination of MOSFET parameters. Normal IC functioning creates device self-heating which allows to shorten the junction temperature range during the design. This allows faster and easier design closure.

During the start-up (power-up and boot) the die is cold and the circuits on-die are “slow”, considering the temperature inversion effect. This forces the design to make the closure at low temperature regardless of the said above self-heating. We propose to allow over-drive level system supply voltage, provided to the IC during the start-up period when the chip is cold, to compensate for the circuit performance degradation due to temperature inversion effect, and get back to spec system supply voltage when the IC got warmed.

Introduction

Modern technology shows temperature inversion effect when the electrical signal paths are “slower” at cold temperature then at hot due to combination of MOSFET parameters. The conjunction of the following parameters, influencing the transistor switching delay differently, creates the temperature inversion effect:

-          Charge carrier mobility (function of T-2 at gate bias corresponding to strong inversion);

-          Threshold voltage Vth (function of T-1);

-          Sub-threshold or leakage current (function of T)

As the temperature inversion effect mitigation, normal IC functioning creates device self-heating which allows to shorten the junction temperature range during the design. This allows faster and easier chip design closure, since less variation should be accounted.

During the start-up (power-up and boot) the chip is cold and the circuits on-die are “slow”, considering the temperature inversion effect. This forces the design to make the closure at low temperature regardless of the said above self-heating.

Apparatus description

We propose to allow over-drive level system supply vol...